22.5 dB open-loop gain, 31 kHz GBW pseudo-CMOS based operational amplifier with a-IGZO TFTs on a flexible film

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Contributors

Abstract

This paper presents an operational amplifier based on pseudo-CMOS blocks and integrated in a flexible a-IGZO TFT technology. The circuit consists of only nMOS transistors, and the pair of active loads is in a pseudo-CMOS configuration. These active loads allow various kinds of common mode feedback schemes or cross-coupled connection, typical for CMOS operational amplifiers. The proposed amplifier is fabricated on a flexible film, and characterized with 5 V supply voltage and an output load capacitance of 15 pF. The measured open-loop gain is 22.5 dB, which is the highest reported for operational amplifiers in metal-oxide TFT technology. The measured bandwidth and gain bandwidth products are 5.6 kHz, and 31 kHz, respectively with 160 μW power consumption, which is lowest among flexible operational amplifies.

Details

Original languageEnglish
Title of host publicationIEEE Asian Solid-State Circuits Conference (A-SSCC) 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages313-316
Number of pages4
ISBN (print)978-1-4799-4090-5
Publication statusPublished - 12 Nov 2014
Peer-reviewedYes

Publication series

SeriesIEEE Asian Conference on Solid-State Circuits (A-SSCC)

Conference

Title2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)
Duration10 - 12 November 2014
LocationKaoHsiung, Taiwan

External IDs

ORCID /0000-0001-6429-0105/work/142236605
ORCID /0000-0002-4230-8228/work/142251418
Scopus 84922496230
ORCID /0000-0002-4152-1203/work/165453376

Keywords

Research priority areas of TU Dresden

Keywords

  • Thin film transistors, Operational amplifiers, Gain, CMOS integrated circuits, Inverters, MOSFET, Bandwidth