Wavelength-selective 4H-SiC UV-sensor array
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
In this work, monolithically integrated wavelength-selective 4H-SiC UV-sensor arrays were manufactured using two photolithography masks and only one implantation sequence demonstrating the potential of the advanced 4H-SiC process technology for the first time. The process technology is described in detail for the fabrication of a 2 × 2 wavelength-sensitive UV-sensor array including two variants with different thicknesses of the p-emitter. The maximum spectral responsivity is 92 mA/W for a wavelength of 300 nm and the devices with a thick p-emitter and 162 mA/W for a wavelength of 290 nm and devices with the thin p-emitter. The corresponding values of the external quantum efficiency are 38%, and 69%, respectively. Furthermore, another UV-sensor characteristic is found evaluating the current difference between both types with a maximum spectral responsivity of 80.2 mA/W at a wavelength of 270 nm.
Details
Originalsprache | Englisch |
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Seiten (von - bis) | 205-211 |
Seitenumfang | 7 |
Fachzeitschrift | Materials science in semiconductor processing |
Jahrgang | 90 |
Publikationsstatus | Veröffentlicht - 2019 |
Peer-Review-Status | Ja |
Extern publiziert | Ja |
Externe IDs
Scopus | 85055657990 |
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Schlagworte
Schlagwörter
- 4H-SiC pin-diode, Ion implantation, Photodiode, UV sensor, Wavelength-selective