Verfahren zur Herstellung eines organischen Transistors und organischer Transistor
Publikation: Geistiges Eigentum › Patentanmeldung/Patent
Beitragende
- Novaled GmbH
Abstract
The invention refers to a method for producing an organic transistor, the method comprising steps of providing a first electrode (2) on a substrate (1), generating a source-drain insulator (3) assigned at least partially to the substrate (1) and/or at least partially to the first electrode (2), generating a second electrode (4) assigned to the source-drain insulator (3), depositing an organic semiconducting layer (5) on the first electrode (2), the second electrode (4), and the source-drain insulator (3), generating a gate insulator (6) assigned to the organic semiconducting layer (5), and providing a gate electrode (7) assigned to the gate insulator (6). Further, the invention relates to an organic transistor.
Details
The invention refers to a method for producing an organic transistor, the method comprising steps of providing a first electrode (2) on a substrate (1), generating a source-drain insulator (3) assigned at least partially to the substrate (1) and/or at least partially to the first electrode (2), generating a second electrode (4) assigned to the source-drain insulator (3), depositing an organic semiconducting layer (5) on the first electrode (2), the second electrode (4), and the source-drain insulator (3), generating a gate insulator (6) assigned to the organic semiconducting layer (5), and providing a gate electrode (7) assigned to the gate insulator (6). Further, the invention relates to an organic transistor.
Originalsprache | Deutsch |
---|---|
IPC (Internationale Patentklassifikation) | H01L 51/ 05 A I |
Veröffentlichungsnummer | EP2924754 |
Land/Gebiet | Deutschland |
Prioritätsdatum | 28 März 2014 |
Prioritätsnummer | EP20140162388 |
Publikationsstatus | Veröffentlicht - 30 Sept. 2015 |
Externe IDs
ORCID | /0000-0002-9773-6676/work/142659848 |
---|