The most conventional atomic layer processing method, atomic layer deposition (ALD), delivers ultrathin blanket coatings with sub-nanometer thickness precision. Lateral confinement underpins the direct atomic layer processing (DALP^®) family of deposition techniques. ALD chemistry applied to DALP^® is a 3D printing method called atomic-layer additive manufacturing (ALAM). Here, we demonstrate the applicability of ALAM to the additive buildup of the crucial ZnS / Sb₂S₃ / V₂O₅ semiconductor stack which constitutes an functional inorganic solar cell. To this goal, ALAM processes are first optimized and evaluated for the individual materials vanadium(V) oxide, zinc sulfide, and antimony(III) sulfide. We establish the layer-by-layer growth mode controlled by self-limiting surface chemistry and characterize the materials’ structure and the smooth surface morphology of ALAM-coated areas. Finally, all three materials are 3D-printed in ALAM mode in combination with electrodes and the electron acceptor titania (TiO₂) to form functional solar cells with a 120 nm thick Sb₂S₃ absorber layer. This novel fabrication of solar cells highlights the advantages of using direct patterning in the prototyping and optimization of photovoltaics in research and development.