Tunneling Barrier-Integrated Gold Nanofilms for Negative Strain Gauging with Near-Zero Energy Consumption

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Soosang Chae - , Korea University of Technology and Education (Autor:in)
  • Wonjin Choi - , Lawrence Livermore National Laboratory (Autor:in)
  • Su Hyeong Lee - , Korea University of Technology and Education (Autor:in)
  • Quinn A. Besford - , Leibniz-Institut für Polymerforschung Dresden (Autor:in)
  • Andreas Fery - , Professur für Physikalische Chemie polymerer Materialien (gB/IPF) (PC5), Leibniz-Institut für Polymerforschung Dresden (Autor:in)

Abstract

Wireless strain sensors with minimal power needs are essential for long-term monitoring in energy-limited environments. We present a soft tunneling barrier-integrated gold thin film for negative strain sensing with near-zero energy consumption. The device features a strain-induced transition from an insulating to a metallic state, increasing conductivity by 9 orders of magnitude under a controlled strain. It consists of Au-PDMS-Au nanofilm layers, where the Au structures are near the percolation threshold and the PDMS layer acts as a tunneling barrier. Under strain, thinning due to the Poisson effect lowers the barrier’s potential height, enabling electron tunneling and forming an electrical path. With a standby power consumption of ∼10-5 mW over 106 times lower than conventional sensors (∼12.5 mW), this device is ideal for real-time, long-term stationary structural monitoring in multiple locations.

Details

OriginalspracheEnglisch
Seiten (von - bis)3556-3564
Seitenumfang9
FachzeitschriftNano letters
Jahrgang25
Ausgabenummer9
PublikationsstatusVeröffentlicht - 5 März 2025
Peer-Review-StatusJa

Externe IDs

PubMed 39991841

Schlagworte

Ziele für nachhaltige Entwicklung

Schlagwörter

  • Near-zero standby power consumption monitoring, Soft negative piezoresistivity electrodes, Stretchable tunneling device, Ultralow-power strain sensor