Towards a multiscale modeling framework for metal-CNT interfaces

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in Buch/Sammelband/GutachtenBeigetragenBegutachtung

Beitragende

Abstract

This paper gives a short overview on our recent investigations towards a multiscale modeling and simulation framework for metal-CNT interfaces. We employ three simulation approaches with well defined interfaces. For the simulation at device level we make use of a recently developed wave-function based effective-mass Schrodinger-Poisson solver which employs a hetero-junction like contact model to capture the physics in the contact region where the CNT is embedded into metal. The required model parameters are adjusted to TB and DFT simulation results. A comparison with experimental data for a short channel device shows the applicability of the proposed approach.

Details

OriginalspracheEnglisch
Titel2014 International Workshop on Computational Electronics (IWCE)
ErscheinungsortParis
Herausgeber (Verlag)IEEE Xplore
Seitenumfang3
ISBN (elektronisch)978-1-4799-5433-9
PublikationsstatusVeröffentlicht - 2014
Peer-Review-StatusJa

Publikationsreihe

ReiheInternational Workshop on Computational Electronics

Externe IDs

Scopus 84907378456

Schlagworte