With floating gate memory cells running into scaling limitations caused by reduced gate coupling and excessive floating gate interference, charge trapping in its two variants multi bit charge trapping and charge trapping NAND is the most promising technology for the mid term. For NOR type applications also Phase change RAM could appear as a competitor in a few years, but some considerable development is still down the road. Concepts to challenge NAND type applications are still in the early stage. Therefore charge trapping is expected to be the technology of choice for code storage in the short to mid term and for data storage in the mid term timeframe.