RF-characterization of HZO thin film varactors
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a “butterfly” shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.
Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 980 |
| Fachzeitschrift | Crystals |
| Jahrgang | 11 |
| Ausgabenummer | 8 |
| Publikationsstatus | Veröffentlicht - Aug. 2021 |
| Peer-Review-Status | Ja |
Externe IDs
| ORCID | /0000-0002-7062-9598/work/174430588 |
|---|
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- ALD, C-V characterisitcs, Complex permittivity, Dielectric relaxation, HZO, Loss tangent, Tunability