Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O Thickness Scaling

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung


  • Jun Okuno - , Sony Group Corporation (Autor:in)
  • Takafumi Kunihiro - , Sony Group Corporation (Autor:in)
  • Kenta Konishi - , Sony Group Corporation (Autor:in)
  • Yusuke Shuto - , Sony Group Corporation (Autor:in)
  • Fumitaka Sugaya - , Sony Group Corporation (Autor:in)
  • Monica Materano - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Tarek Ali - , Fraunhofer Institute for Photonic Microsystems (Autor:in)
  • Maximilian Lederer - , Professur für Experimentalphysik/Photophysik, Institut für Angewandte Physik (IAP), Fraunhofer Institute for Photonic Microsystems (Autor:in)
  • Kati Kuehnel - , Fraunhofer Institute for Photonic Microsystems (Autor:in)
  • Konrad Seidel - , Fraunhofer Institute for Photonic Microsystems (Autor:in)
  • Thomas Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH, Technische Universität Dresden (Autor:in)
  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Masanori Tsukamoto - , Sony Group Corporation (Autor:in)
  • Taku Umebayashi - , Sony Group Corporation (Autor:in)


We have reported that film thickness scaling of ferroelectric Hf0.5Zr0.5O2(HZO) allows hafnium-based one- transistor and one-capacitor (1T1C) ferroelectric random-access memory (FeRAM) to obtain higher cycling tolerance for hard breakdown with lower voltage operation in prior reports. This paper is an extension of the previous works including a review of recent works on FeRAM-related devices from a film thickness scaling point of view. We experimentally verified the cycling tolerance advantage of film thickness scaling by 1T1C FeRAM array with different HZO thicknesses of 8 nm and 10 nm using different small capacitors areas (0.20, 0.40, and 1.00 μm2 ) at practical operation conditions for the first time, demonstrating higher reliability at the 8-nm sample with smaller capacitance area. To support the result, time zero dielectric breakdown (TZDB) and time dependent dielectric breakdown (TDDB) were conducted for both 8-nm and 10a-nm samples.


Seiten (von - bis)778-783
FachzeitschriftIEEE journal of the Electron Devices Society
PublikationsstatusVeröffentlicht - 2022

Externe IDs

Mendeley c9402635-7975-3eea-9a9c-e2adae6494b2
ORCID /0000-0003-3814-0378/work/142256262


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  • Capacitor, ferroelectric random-access memory, hafnium oxide, thickness scaling, zirconium oxide, Ferroelectric films, Capacitors, Random access memory, Thickness scaling, Hafnium oxide, Zirconium, Nonvolatile memory, Zirconium oxide, Ferroelectric random-access memory, Dielectric breakdown, Transistors