Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
Localization effects on the optical properties of GaAs1- xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.
Details
Originalsprache | Englisch |
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Aufsatznummer | 164306 |
Fachzeitschrift | Journal of applied physics |
Jahrgang | 114 |
Ausgabenummer | 16 |
Publikationsstatus | Veröffentlicht - 28 Okt. 2013 |
Peer-Review-Status | Ja |
Extern publiziert | Ja |