Plasmonic superlensing in doped GaAs
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
We demonstrate a semiconductor based broadband near-field superlens in the mid-infrared regime. Here, the Drude response of a highly doped n-GaAs layer induces a resonant enhancement of evanescent waves accompanied by a significantly improved spatial resolution at radiation wavelengths around λ = 20 μm, adjustable by changing the doping concentration. In our experiments, gold stripes below the GaAs superlens are imaged with a λ/6 subwavelength resolution by an apertureless near-field optical microscope utilizing infrared radiation from a free-electron laser. The resonant behavior of the observed superlensing effect is in excellent agreement with simulations based on the Drude-Lorentz model. Our results demonstrate a rather simple superlens implementation for infrared nanospectroscopy.
Details
Originalsprache | Englisch |
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Seiten (von - bis) | 1057-1061 |
Seitenumfang | 5 |
Fachzeitschrift | Nano letters |
Jahrgang | 15 |
Ausgabenummer | 2 |
Publikationsstatus | Veröffentlicht - 11 Feb. 2015 |
Peer-Review-Status | Ja |
Externe IDs
ORCID | /0000-0002-2484-4158/work/158768086 |
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Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- diffraction limit, near-field microscopy, semiconductor, Superlens, surface plasmons