Parent Substrate, Wafer Composite and Methods of Manufacturing Crystalline Substrates and Semiconductor Devices

Publikation: Geistiges Eigentum › Patentanmeldung/Patent

Beitragende

  • Ralf Rieske - , Infineon Technologies AG (Erfinder:in)
  • Alexander Binter - (Erfinder:in)
  • Wolfgang Diewald - (Erfinder:in)
  • Bernhard Goller - (Erfinder:in)
  • Heimo Graf - (Erfinder:in)
  • Gerald Lackner - (Erfinder:in)
  • Jan Richter - (Erfinder:in)
  • Roland Rupp - (Erfinder:in)
  • Guenter Schagerl - (Erfinder:in)
  • Marko David Swoboda - , Infineon Technologies AG (Erfinder:in)

Abstract

Provided is a machining apparatus including a profile sensor unit configured to obtain shape information about a parent substrate; and a laser scan unit configured to direct a laser beam onto the parent substrate, wherein a laser beam axis of the laser beam is tilted to an exposed main surface of the parent substrate, and wherein a track of the laser beam on the parent substrate is controllable as a function of the shape information obtained from the profile sensor unit.

Details

Provided is a machining apparatus including a profile sensor unit configured to obtain shape information about a parent substrate; and a laser scan unit configured to direct a laser beam onto the parent substrate, wherein a laser beam axis of the laser beam is tilted to an exposed main surface of the parent substrate, and wherein a track of the laser beam on the parent substrate is controllable as a function of the shape information obtained from the profile sensor unit.

OriginalspracheEnglisch
IPC (Internationale Patentklassifikation)H01L 21/ 78 A I
VeröffentlichungsnummerUS2023330769
Anmeldedatum16 Juni 2023
Land/GebietUSA/Vereinigte Staaten
Prioritätsdatum16 Juni 2023
PrioritätsnummerUS202318336643
PublikationsstatusVeröffentlicht - 19 Okt. 2023
Extern publiziertJa
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Externe IDs

ORCID /0000-0003-2572-1149/work/208796497