ORGANIC FIELD EFFECT TRANSISTOR AND METHOD FOR PRODUCING THE SAME
Publikation: Geistiges Eigentum › Patentanmeldung/Patent
Beitragende
- Novaled GmbH
- Technische Universität Dresden
Abstract
The invention relates an organic field effect transistor, comprising a first electrode (1) and a second electrode (2), the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer (3) in electrical contact with the first and second electrode (1, 2), a gate electrode (6), a gate insulator (5) provided between the gate electrode (6) and the intrinsic organic semiconducting layer (3), and a doped organic semiconducting layer (4) comprising an organic matrix material and an organic dopant, wherein the doped organic semiconducting layer (4) is provided between the gate insulator (5) and the intrinsic organic semiconducting layer (3), wherein a charge carrier channel between the first and second electrode (1, 2) is formed in the doped organic semiconducting layer (4). Further, the invention relates to a method for producing an organic field effect transistor.
Details
The invention relates an organic field effect transistor, comprising a first electrode (1) and a second electrode (2), the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer (3) in electrical contact with the first and second electrode (1, 2), a gate electrode (6), a gate insulator (5) provided between the gate electrode (6) and the intrinsic organic semiconducting layer (3), and a doped organic semiconducting layer (4) comprising an organic matrix material and an organic dopant, wherein the doped organic semiconducting layer (4) is provided between the gate insulator (5) and the intrinsic organic semiconducting layer (3), wherein a charge carrier channel between the first and second electrode (1, 2) is formed in the doped organic semiconducting layer (4). Further, the invention relates to a method for producing an organic field effect transistor.
Originalsprache | Englisch |
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IPC (Internationale Patentklassifikation) | H01L 51/ 00 A I |
Veröffentlichungsnummer | WO2013149678 |
Land/Gebiet | Deutschland |
Prioritätsdatum | 27 Apr. 2012 |
Prioritätsnummer | EP20120166029 |
Publikationsstatus | Veröffentlicht - 10 Okt. 2013 |
Externe IDs
ORCID | /0000-0002-9773-6676/work/142659840 |
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