Modeling of CMOS Integrated Strain Sensors and Sensitivity Enhanced Readout Architecture
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
Integrating sensors within a complete readout system on a single die has become essential to the More-than-Moore philosophy. Mechanical stress, as one of the physical quantities of potential interest, provides various information from simple static to dynamic load. Integration of piezoresistive elements within a complete CMOS system has been achieved in many ways, and ground-laying effects have been studied and described in detail. To bring the mechanical and electrical domains closer together, a new concept is presented that allows an analytical and simulation-based approximation of the sensors’ behavior due to applied mechanical stress as part of established concepts in electronics. It is evaluated based on measured state-of-the-art sensor implementations and used to bring up an alternative architecture with enhanced and on-the-fly adaptive sensitivity. Simulations are used to then further evaluate any model errors due to second-order effects that have been neglected within the design process.
Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 583-594 |
| Seitenumfang | 12 |
| Fachzeitschrift | IEEE Transactions on Circuits and Systems I: Regular Papers |
| Jahrgang | 71 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - 2023 |
| Peer-Review-Status | Ja |
| Extern publiziert | Ja |
Externe IDs
| Scopus | 85180314122 |
|---|
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- Strain measurement, adjustable current mirror, integrated sensing, piezoresistivity, sensor model