Modeling of CMOS Integrated Strain Sensors and Sensitivity Enhanced Readout Architecture

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Kim Allinger - , Technische Universität Hamburg (Autor:in)
  • Andreas Bahr - , Technische Universität Hamburg, Fachhochschule Kiel (Autor:in)
  • Matthias Kuhl - , Albert-Ludwigs-Universität Freiburg (Autor:in)

Abstract

Integrating sensors within a complete readout system on a single die has become essential to the More-than-Moore philosophy. Mechanical stress, as one of the physical quantities of potential interest, provides various information from simple static to dynamic load. Integration of piezoresistive elements within a complete CMOS system has been achieved in many ways, and ground-laying effects have been studied and described in detail. To bring the mechanical and electrical domains closer together, a new concept is presented that allows an analytical and simulation-based approximation of the sensors’ behavior due to applied mechanical stress as part of established concepts in electronics. It is evaluated based on measured state-of-the-art sensor implementations and used to bring up an alternative architecture with enhanced and on-the-fly adaptive sensitivity. Simulations are used to then further evaluate any model errors due to second-order effects that have been neglected within the design process.

Details

OriginalspracheEnglisch
Seiten (von - bis)583-594
Seitenumfang12
FachzeitschriftIEEE Transactions on Circuits and Systems I: Regular Papers
Jahrgang71
Ausgabenummer2
PublikationsstatusVeröffentlicht - 2023
Peer-Review-StatusJa
Extern publiziertJa

Externe IDs

Scopus 85180314122

Schlagworte

Schlagwörter

  • Strain measurement, adjustable current mirror, integrated sensing, piezoresistivity, sensor model