Limiting Amplifier with 25 THz Gain-Bandwidth-Product and Internal Amplitude Control for Data Rates beyond 50 Gbit/s in 130 nm SiGe

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Abstract

This work presents an integrated, fully differential limiting amplifier designed for broadband communication systems with data rates up to 100 Gbit/s. It offers a dc gain of 58 dB and a gain-bandwidth-product (GBWP) of 25.4 THz. At 50 Gbit/s the input dynamic range for a differential peak-to-peak voltage swing of 1 V is larger than 40 dB. The outputs rise time is 7.8 ps and the sensitivity, for a bit error rate of 10-6, is below 7 mV. The circuit employs a combination of small-signal and large-signal feedback techniques to increase the GBWP and to reduce undesired non-linear signal distortion for data rates above 50 Gbit/s. The key feature for achieving the highest data rates, without impairing the small-signal performance, is the internal amplitude control. The total power consumption of the circuit is 365 mW from a single 4.3 V supply. The final chip occupies a total area of 0.67 mm and is manufactured in a 130 nm SiGe BiCMOS process with a transit frequency of 300 GHz.

Details

OriginalspracheEnglisch
Titel2019 IEEE MTT-S International Microwave Symposium, IMS 2019
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers (IEEE)
Seiten412-415
Seitenumfang4
ISBN (elektronisch)9781728113098
PublikationsstatusVeröffentlicht - Juni 2019
Peer-Review-StatusJa

Publikationsreihe

ReiheIEEE MTT-S International Microwave Symposium Digest
Band2019-June
ISSN0149-645X

(Fach-)Tagung

Titel2019 IEEE/MTT-S International Microwave Symposium
KurztitelIMS 2019
Dauer2 - 7 Juni 2019
BekanntheitsgradInternationale Veranstaltung
OrtBoston Convention and Exhibition Center
StadtBoston
LandUSA/Vereinigte Staaten

Schlagworte

Schlagwörter

  • amplitude control, BiCMOS, digital, limiter, limiting amplifier, millimeter wave (mm-wave), SiGe