Investigations on fluorite-structured ferroelectric HfO₂/ZrO₂ thin films are aiming to achieve high-performance films required for memory and computing technologies. These films exhibit excellent scalability and compatibility with the complementary metal-oxide semiconductor process used by semiconductor foundries, but stabilizing ferroelectric properties with a low operation voltage in the as-fabricated state of these films is a critical component for technology advancement. After removing the influence of interfacial layers, a linear correlation is observed between the biaxial strain and the electric field for transforming the nonferroelectric tetragonal to the ferroelectric orthorhombic phase in ZrO₂ thin films. This observation is supported by applying the principle of energy conservation in combination with ab initio and molecular dynamics simulations. According to the simulations, a rarely reported Pnm2₁ orthorhombic phase may be stabilized by tuning biaxial strain in the ZrO₂ films.