Hafnium zirconium oxide (HZO) is a promising material for ferroelectric non-volatile memory devices as it has low crystalline temperatures and hence is back-end-of-line compatible, is complementary metal-oxide-semiconductor technology compatible (CMOS) as well as offers thickness scalability advantages. Here, we study the insertion of the SiO₂ and Al₂O₃ interface layers in ferroelectric HZO-based MFM capacitors in terms of ferroelectric behavior. By using such interface layers, an outstanding 2P_r value of around 60 μC/cm² can be achieved.