Many emerging organic semiconductor devices suffer from hysteresis effects caused by traps. The impact of such traps on AC device performance has not been investigated yet. In this paper, high-frequency non-quasi-static effects related to dynamic trapping based on a theoretical framework, TCAD simulations and experimental data have been studied. In contrast to previous studies, the focus of this paper is the OFET's high-frequency performance and not the characterization of the traps.