In this paper, recent advances on the development of Hafnium oxide (HfO2)-based ferroelectric field-effect transistors (FeFETs) are shown with respect to its memory window, trapping behavior and endurance characteristics. Although this novel ferroelectric memory cell shows superior characteristics such as device scalability, CMOS compatibility, fast access time and low power operation, the challenges for HfO2-based FeFET device lie with device variability and endurance. To investigate endurance failure in relation to charge trapping, different time delays were introduced to allow for detrapping of charges leading to improved endurance behavior. Besides the continuous improvements in process technology which minimize trap densities, we here demonstrate a mitigation of device variability, using a targeted programming scheme, with which a significantly lower device variability is achieved.