Design of bendable high-frequency circuits based on short-channel InGaZnO TFTs

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

Abstract

A unique requirement of flexible electronic systems is the need to simultaneously optimize their electrical and mechanical performance. Amorphous InGaZnO thin-film transistors (TFTs) fabricated on free-standing large-area plastic substrates address this issue by providing a carrier mobility >10 cm 2 /Vs, and bendability down to radii as small as 25 μm. At the same time, limitations such as a constrained minimum lateral feature size, the lack of appropriate p-type materials, or the influence of strain have to be considered when designing circuits. Here, models describing the scaling and bending behavior of flexible InGaZnO TFTs, together with the design of strain insensitive circuits operating at megahertz frequencies are presented.

Details

OriginalspracheEnglisch
TitelIEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS) 2019
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seitenumfang3
ISBN (elektronisch)978-1-5386-9304-9
ISBN (Print)978-1-5386-9305-6
PublikationsstatusVeröffentlicht - Juli 2019
Peer-Review-StatusJa

Publikationsreihe

ReiheIEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)

Konferenz

Titel1st IEEE International Conference on Flexible and Printable Sensors and Systems, FLEPS 2019
Dauer7 - 10 Juli 2019
StadtGlasgow
LandGroßbritannien/Vereinigtes Königreich

Externe IDs

ORCID /0000-0001-6429-0105/work/142236598
ORCID /0000-0002-4152-1203/work/165453362