Controlled n-type doping of a molecular organic semiconductor: Naphthalenetetracarboxylic dianhydride (NTCDA) doped with bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

Abstract

We present a study of controlled n-type doping in molecular organic semiconductors: Naphthalenetetracarboxylic dianhydride is doped by cosublimation with the donor molecule bis(ethylenedithio)-tetrathiafulvalene. Electrical parameters are deduced from temperature-dependent measurements of the conductivity and the thermopower for various dopant concentrations. The results are compared to the predictions of a standard model commonly used for crystalline semiconductors. The Fermi level shifts towards the transport level, the conductivity is increased, and the mobility decreases with the doping ratio. (C) 2000 American Institute of Physics. [S0021-8979(00)00607-1].

Details

OriginalspracheEnglisch
Seiten (von - bis)4340-4343
Seitenumfang4
FachzeitschriftJournal of applied physics
Jahrgang87
Ausgabenummer9
PublikationsstatusVeröffentlicht - 1 Mai 2000
Peer-Review-StatusJa

Externe IDs

Scopus 0000522486

Schlagworte

Schlagwörter

  • Light-emitting-diodes, Thin-films, Phthalocyanine, Cosublimation, Transistor, Cell

Bibliotheksschlagworte