Two-dimensional transition metal dichalcogenides like molybdenum- and tungsten sulfide are semiconducting and promising as active materials in future microelectronic applications like thin-film transistors, sensors, solar cells, and photodetectors. The structural advantages in comparison to other materials are the high mechanical flexibility and stability. Additionally, these materials have band gaps dependent on their film thickness and electronic properties dependent on their crystal structure. Therefore, these materials have already been tested in catalysis and electronic applications. A big challenge for their implementation in industrial applications is the fabrication of large-area 2D materials. Since classical mechanical exfoliation methods are not suitable for the production of large-area films, chemical vapor deposition (CVD) is the method of choice. Herein we report a successfully developed CVD process for MoS2 with a specifically designed molybdenum precursor. The growth of homogeneous and large-area 2H-MoS2 with high purity was confirmed and the suitability as a channel material for transistor structures was tested.