Characterization of electrostatic carrier substrates to be used as a support for thin semiconductor wafers

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

  • K. Bock - , Professur für Aufbau- und Verbindungstechnik der Elektronik, Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration (Autor:in)
  • C. Landesberger - , Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration (Autor:in)
  • M. Bleier - , Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration (Autor:in)
  • D. Bollmann - , Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration (Autor:in)
  • D. Hemmetzberger - , Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration (Autor:in)

Abstract

Mobile electrostatic carriers enable secure and reversible attachment of very thin semiconductor wafers by electrostatic forces which are induced by a permanent polarization state of a dielectric layer. The paper reports on the electrical and thermal characterization of electrostatic carriers, also called "Smart Carriers", prepared by thick film technology on alumina substrates and by thin film technology on silicon substrates. Development work revealed the strong impact of leakage currents when durable attractive forces at temperatures above 250 °C have to be attained. When using silicon as substrate material the electrostatic attraction was active for more than 1 hour at temperatures of 400 °C. The carrier system will be demonstrated at the poster stand.

Details

OriginalspracheEnglisch
Titel2005 International Conference on Compound Semiconductor Manufacturing Technology
PublikationsstatusVeröffentlicht - 2005
Peer-Review-StatusJa

Publikationsreihe

Reihe2005 International Conference on Compound Semiconductor Manufacturing Technology

Konferenz

Titel2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005
Dauer11 - 14 April 2005
StadtNew Orleans, LA
LandUSA/Vereinigte Staaten

Externe IDs

ORCID /0000-0002-0757-3325/work/139064972

Schlagworte

Schlagwörter

  • Electrostatic carrier substrates, Reversible bonding, Smart carrier, Thin wafer processing