A novel topology to characterize high voltage IGBTs in a soft switching converter

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

Abstract

Characterizing high voltage IGBTs in a soft switching series resonance converter usually involves building a test bench that incorporates bulky and expensive power supplies. In this paper a test circuit employing a novel operation mode, the so called quasi-steady mode, is introduced which allows the investigation of the semiconductors at low expense of power supplies.

Details

OriginalspracheDeutsch
Titel2011 Semiconductor Conference Dresden
Herausgeber (Verlag)IEEE Computational Intelligence Society (CIS)
Seiten1-4
Seitenumfang4
ISBN (Print)978-1-4577-0429-1
PublikationsstatusVeröffentlicht - 28 Sept. 2011
Peer-Review-StatusJa

Konferenz

Titel2011 Semiconductor Conference Dresden
Dauer27 - 28 September 2011
OrtDresden, Germany

Externe IDs

Scopus 82155163927

Schlagworte

Schlagwörter

  • Insulated gate bipolar transistors, Power supplies, Switches, Capacitors, Bridge circuits, Inductance, Resistors