A call-up for circuit-switched NoCs in the Dark-Silicon Era

Publikation: Beitrag zu Konferenzen › Paper › Beigetragen › Begutachtung

Beitragende

Details

OriginalspracheEnglisch
Seiten1-6
Seitenumfang6
PublikationsstatusVeröffentlicht - 2017
Peer-Review-StatusJa

Konferenz

TitelIEEE Nordic Circuits and Systems Conference (NORCAS)
UntertitelNORCHIP and International Symposium of System-on-Chip (SoC)
KurztitelNORCAS 2017
Dauer23 - 25 Oktober 2017
Webseite
BekanntheitsgradInternationale Veranstaltung
OrtLinköping Konsert & Kongress
StadtLinkoping
LandSchweden

Externe IDs

Scopus 85045724671
ORCID /0000-0003-2571-8441/work/142240426

Schlagworte

Ziele für nachhaltige Entwicklung

  • SDG 7 – Erschwingliche und saubere Energie - elemental semiconductors, integrated circuit design, multilayers, silicon, dark silicon era, energy-efficiency, future NoC, multicore chips, future many-cores, Synopsys Design Compiler, SAED90nm technology, size 90 nm, Si, Libraries, Multicore processing, Optimization, Power demand, Dark-Silicon, Energy, energy conservation, multiprocessing systems, network-on-chip, mixed Vth double layered design, layer switching, total chip power, low complexity energy-efficient solution, supply levels, multilayered-CS-NoC architecture, single-layer single supply CS-NoC, Energy efficiency, Threshold voltage, Frequency synthesizers, Circuit-Switching, NoC

Schlagwörter

  • elemental semiconductors, integrated circuit design, multilayers, silicon, dark silicon era, energy-efficiency, future NoC, multicore chips, future many-cores, Synopsys Design Compiler, SAED90nm technology, size 90 nm, Si, Libraries, Multicore processing, Optimization, Power demand, Dark-Silicon, Energy, energy conservation, multiprocessing systems, network-on-chip, mixed Vth double layered design, layer switching, total chip power, low complexity energy-efficient solution, supply levels, multilayered-CS-NoC architecture, single-layer single supply CS-NoC, Energy efficiency, Threshold voltage, Frequency synthesizers, Circuit-Switching, NoC