1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung



A novel system-on-a-chip compatible one-transistor one-capacitor ferroelectric random-access memory array (1T1C FeRAM) based on ferroelectric Hf0.5Zr0.5O2 with a capacitor under bitline (CUB) structure was experimentally demonstrated. The CUB structure facilitates the application of post-metallization annealing on metal/ferroelectric/metal capacitors above 500 °C because they are fabricated before the back-end-of-line process. A large remanent polarization of 2Pr > 40∼μ C/cm2, projected endurance >1011 cycles, and ten years of data retention at 85 °C were obtained at 500 °C, after metallization using a single large capacitor. Furthermore, a large memory window of the 64 kbit 1T1C FeRAM array with 500 °C post-metallization was comprehensively demonstrated without degradation of the underlying CMOS logic transistors. The operation voltage and speed dependence were extensively investigated using a dedicated sense amplifier for the 1T1C FeRAM. Furthermore, the perfect bit functionality at an operation voltage of 2.5 V and a read/write speed < 10 ns were obtained. Therefore, superior properties of CUB-structured 1T1C FeRAM can be achieved by flexible process engineering of crystallization annealing for metal/ferroelectric/metal fabrication.


Seiten (von - bis)29-34
FachzeitschriftIEEE journal of the Electron Devices Society
PublikationsstatusVeröffentlicht - 19 Nov. 2021

Externe IDs

Scopus 85120038118
WOS 000756799300006
Mendeley 64c5da66-40b7-30d9-8788-72b843cf4570
unpaywall 10.1109/jeds.2021.3129279



  • CUB, Capacitor under bitline, FeRAM, Ferroelectric random-access memory, Hafnium oxide, Post-metallization annealing, Zirconium oxide, hafnium oxide, capacitor under bitline, post-metallization annealing, zirconium oxide