Y2O3 sol-gel passivation layer for solution-processed metal-oxide thin-film transistors
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Beitragende
Abstract
In this study the electrical stability of solution processed metal-oxide thin-film transistors (MOTFTs) is improved by an yttrium oxide (Y2O3) passivation layer. Therefore, we tailored a simple Y2O3 sol-gel process towards a thin, smooth and continuous film. For a 0.1 M Yttrium(III) nitrate hexahydrate solution gelatinized for 5 h, pre-converted in an UV/O3 cleaner (t = 40 min) and thermally converted at T = 350 °C a root-mean-square (RMS) roughness of 0.1 nm is determined. The refractive index is 1.9 and corresponds to the reported value in literature (n = 1.9 [1]). Finally, we compare MOTFTs passivated by a) octadecylphosphonic acid (ODPA), b) the sol-gel derived Y2O3 and c) an Y2O3 layer from atomic layer deposition (ALD). The field-effect mobility is not significantly affected by the passivation layer and the onset voltage of MOTFTs passivated with a sol-gel derived Y2O3 layer amounts desirable 0 V. The onset voltage shift during negative-bias-stress (NBS) amounts to ?Von,Y2O3 = -2 V for MOTFTs with a sol-gel Y2O3 passivation layer and is five times smaller compared to MOTFTs with a solution-processed ODPA passivation layer (?Von,ODPA = -10 V). The quality is comparable to MOTFTs passivated by Y2O3 with a cost-intensive ALD process (?Von,ALD = -2 V).
Details
Originalsprache | Englisch |
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Titel | Mikro-Nano-Integration - 7. GMM-Workshops |
Herausgeber (Verlag) | VDE Verlag, Berlin [u. a.] |
Seiten | 62-67 |
Seitenumfang | 6 |
ISBN (elektronisch) | 9783800747894 |
Publikationsstatus | Veröffentlicht - 2018 |
Peer-Review-Status | Ja |
Extern publiziert | Ja |
Publikationsreihe
Reihe | GMM-Fachbericht (92) |
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Konferenz
Titel | 7th GMM-Workshops on Micro-Nano-Integration |
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Dauer | 22 - 23 Oktober 2018 |
Stadt | Dortmund |
Land | Deutschland |