Vertical organic permeable dual-base transistors for logic circuits

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

Abstract

The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of

Details

OriginalspracheEnglisch
Aufsatznummer4725
Seitenumfang9
FachzeitschriftNature communications
Jahrgang11
Ausgabenummer1
PublikationsstatusVeröffentlicht - 18 Sept. 2020
Peer-Review-StatusJa

Externe IDs

Scopus 85091247379
ORCID /0000-0002-9773-6676/work/142247029

Schlagworte

Schlagwörter

  • FIELD-EFFECT TRANSISTORS, THIN-FILM TRANSISTORS, INTEGRATED-CIRCUITS, VOLTAGE, AMBIPOLAR, POLYMER, TRANSPORT

Bibliotheksschlagworte