Vertical organic permeable dual-base transistors for logic circuits
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of
Details
Originalsprache | Englisch |
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Aufsatznummer | 4725 |
Seitenumfang | 9 |
Fachzeitschrift | Nature communications |
Jahrgang | 11 |
Ausgabenummer | 1 |
Publikationsstatus | Veröffentlicht - 18 Sept. 2020 |
Peer-Review-Status | Ja |
Externe IDs
Scopus | 85091247379 |
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ORCID | /0000-0002-9773-6676/work/142247029 |
Schlagworte
Schlagwörter
- FIELD-EFFECT TRANSISTORS, THIN-FILM TRANSISTORS, INTEGRATED-CIRCUITS, VOLTAGE, AMBIPOLAR, POLYMER, TRANSPORT