In this paper, a complementary metal oxide semiconductor (CMOS) frequencydoubler for wireless applications at Ka-band is presented. The microwavemonolithic integrated circuit (MMIC) is fabricated using digital90 nm silicon on insulator (SOI) technology. All impedance matching,filter and bias elements are implemented on the chip, which has avery compact size of 0.37 mm/spl times/0.27 mm. At an output frequencyof 27 GHz, source/load impedances of 50 /spl Omega/, a supply voltageof 1.25 V, a supply current of 8 mA and an input power of -4.5 dBm,a conversion gain of 1.5 dB was measured. To the knowledge of theauthors, the circuit has by far the highest operation frequency fora CMOS frequency multiplier reported to date and requires lower supplypower than circuits using leading edge III/V and silicon germanium(SiGe) technologies.