This work compares the switching characteristics of silicon, silicon carbide and gallium nitride based semiconductor power devices over a wide operating range. Several 600V SMD packaged devices are measured in a similar test setup. To consider different $\mathrm{R}_{\mathrm{DSon}}$ values a switching figure of merit (FOM) is used. The investigations focus on the switching losses, the presented FOM and the dv/dt during the switching process.