Stability analysis supports memristor circuit design
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Beitragende
Abstract
In this paper1 a stability analysis sheds light into aspects of memristor circuit design, revealing a circuit theoretic technique for the stabilization of the NDR portion of the device DC characteristic. This type of studies supports the work of designers exploring memristor potential in electronics. Concepts from nonlinear dynamics theory allow us to gain a deep understanding of the dynamics of our locally-active memristor. The analysis provides hints on how to design an oscillator where limit-cycle behavior emerges from the locally-active threshold switching of the memristor, as theoretically proved here.
Details
Originalsprache | Englisch |
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Titel | 2015 IEEE International Symposium on Circuits and Systems (ISCAS) |
Herausgeber (Verlag) | IEEE Xplore |
Seiten | 1138-1141 |
Seitenumfang | 4 |
ISBN (elektronisch) | 9781479983919 |
Publikationsstatus | Veröffentlicht - 27 Juli 2015 |
Peer-Review-Status | Ja |
Publikationsreihe
Reihe | IEEE International Symposium on Circuits and Systems (ISCAS) |
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ISSN | 0271-4302 |
Konferenz
Titel | IEEE International Symposium on Circuits and Systems 2015 |
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Kurztitel | ISCAS 2015 |
Dauer | 24 - 27 Mai 2015 |
Stadt | Lisbon |
Land | Portugal |
Externe IDs
ORCID | /0000-0001-7436-0103/work/142240367 |
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ORCID | /0000-0003-3814-0378/work/142256336 |