Spontaneous Anomalous Hall Effect Arising from an Unconventional Compensated Magnetic Phase in a Semiconductor
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a noncollinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the nonmagnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect.
Details
Originalsprache | Englisch |
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Aufsatznummer | 036702 |
Fachzeitschrift | Physical review letters |
Jahrgang | 130 |
Ausgabenummer | 3 |
Publikationsstatus | Veröffentlicht - 20 Jan. 2023 |
Peer-Review-Status | Ja |
Externe IDs
Scopus | 85147197292 |
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WOS | 000939267000002 |
Mendeley | 889421cc-c85f-3b26-b5c3-5cbdcbc71aa2 |
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- Electronic-structure, Total-energy