Spectral focusing of broadband silver electroluminescence in nanoscopic FRET-LEDs

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Robin P. Puchert - , Universität Regensburg (Autor:in)
  • Florian Steiner - , Universität Regensburg (Autor:in)
  • Gerd Plechinger - , Universität Regensburg (Autor:in)
  • Felix J. Hofmann - , Universität Regensburg (Autor:in)
  • Ines Caspers - , Universität Regensburg (Autor:in)
  • Johanna Kirschner - , Universität Regensburg (Autor:in)
  • Philipp Nagler - , Universität Regensburg (Autor:in)
  • Alexey Chernikov - , Universität Regensburg (Autor:in)
  • Christian Schüller - , Universität Regensburg (Autor:in)
  • Tobias Korn - , Universität Regensburg (Autor:in)
  • Jan Vogelsang - , Universität Regensburg (Autor:in)
  • Sebastian Bange - , Universität Regensburg (Autor:in)
  • John M. Lupton - , Universität Regensburg (Autor:in)

Abstract

Few inventions have shaped the world like the incandescent bulb. Edison used thermal radiation from ohmically heated conductors, but some noble metals also exhibit 'cold' electroluminescence in percolation films, tunnel diodes, electromigrated nanoparticle aggregates, optical antennas or scanning tunnelling microscopy. The origin of this radiation, which is spectrally broad and depends on applied bias, is controversial given the low radiative yields of electronic transitions. Nanoparticle electroluminescence is particularly intriguing because it involves localized surface-plasmon resonances with large dipole moments. Such plasmons enable very efficient non-radiative fluorescence resonance energy transfer (FRET) coupling to proximal resonant dipole transitions. Here, we demonstrate nanoscopic FRET-light-emitting diodes which exploit the opposite process, energy transfer from silver nanoparticles to exfoliated monolayers of transition-metal dichalcogenides. In diffraction-limited hotspots showing pronounced photon bunching, broadband silver electroluminescence is focused into the narrow excitonic resonance of the atomically thin overlayer. Such devices may offer alternatives to conventional nano-light-emitting diodes in on-chip optical interconnects.

Details

OriginalspracheEnglisch
Seiten (von - bis)637-641
Seitenumfang5
FachzeitschriftNature nanotechnology
Jahrgang12
Ausgabenummer7
PublikationsstatusVeröffentlicht - 1 Juli 2017
Peer-Review-StatusJa
Extern publiziertJa

Externe IDs

PubMed 28396606