Sinusoidal Current Operation of Delay-Time Compensation for Parallel-Connected IGBTs
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
The parallel connection of IGBTs is being applied in various low- and medium-voltage converters. The selection of the devices, the manual parametrization of gate units, and the substantial device derating are substantial disadvantages of state-of-the-art converters with parallel-connected insulated-gate bipolar transistors (IGBTs). A new, low-expensive, and automated delay-time compensation method without additional current measurements was introduced in the 2011 IEEE Energy Conversion Congress and Exposition. This paper briefly reviews the structure and function of this new scheme, shows the extension of the scheme for three parallel-connected IGBTs, and investigates the performance of the new delay-time compensation principle for sinusoidal current operation at different $\cos\phi$ and $m_{a}$ values, as in a converter for drives.
Details
Originalsprache | Englisch |
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Aufsatznummer | 6737235 |
Seiten (von - bis) | 3485-3493 |
Seitenumfang | 9 |
Fachzeitschrift | IEEE transactions on industry applications |
Jahrgang | 50 |
Ausgabenummer | 5 |
Publikationsstatus | Veröffentlicht - 1 Okt. 2014 |
Peer-Review-Status | Ja |
Externe IDs
Scopus | 84907457168 |
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Schlagworte
Schlagwörter
- Insulated gate bipolar transistors, Delays, Voltage measurement, Current measurement, Integrated circuits, Logic gates