Scalable synthesis of fused thiophene-diketopyrrolopyrrole semiconducting polymers processed from nonchlorinated solvents into high performance thin film transistors

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • James R. Matthews - , Corning Incorporated (Autor:in)
  • Weijun Niu - , Corning Incorporated (Autor:in)
  • Adama Tandia - , Corning Incorporated (Autor:in)
  • Arthur L. Wallace - , Corning Incorporated (Autor:in)
  • Jieyu Hu - , Corning Incorporated (Autor:in)
  • Wen Ya Lee - , Stanford University (Autor:in)
  • Gaurav Giri - , Stanford University (Autor:in)
  • Stefan C.B. Mannsfeld - , Stanford University, SLAC National Accelerator Laboratory (Autor:in)
  • Yingtao Xie - , Shanghai Jiao Tong University (Autor:in)
  • Shucheng Cai - , Shanghai Jiao Tong University (Autor:in)
  • Hon Hang Fong - , Shanghai Jiao Tong University (Autor:in)
  • Zhenan Bao - , Stanford University (Autor:in)
  • Mingqian He - , Corning Incorporated (Autor:in)

Abstract

The synthesis and characterization of a fused thiophene- diketopyrrolopyrrole based semiconducting polymer PTDPPTFT4 is presented. A number of synthetic challenges have been overcome in the development of a practical scalable synthesis. Characterization by Gel Permeation Chromatography (GPC) over a range of temperatures has revealed the tendency of this polymer to aggregate even at elevated temperatures and confirmed that the molecular weight values obtained are for nonaggregated material. This polymer meets a number of important requirements for potential industrial applications, such as scalable synthesis, solubility in industrially suitable solvents, and material stability and processability into stable high performance thin film transistor devices. Computational modeling has been used to help explain the structure property relationships contributing to the high performance. Grazing incidence X-ray of the thin films showed out of plane lamellar packing and in plane π-π stacking, both good indicators of a preferentially oriented thin film, desirable for high charge carrier mobility. Hole mobilities in excess of 2 cm 2/V·s, on/off ratio of >106, and threshold voltage <2 V have been achieved.

Details

OriginalspracheEnglisch
Seiten (von - bis)782-789
Seitenumfang8
FachzeitschriftChemistry of materials
Jahrgang25
Ausgabenummer5
PublikationsstatusVeröffentlicht - 12 März 2013
Peer-Review-StatusJa
Extern publiziertJa

Schlagworte

Forschungsprofillinien der TU Dresden

Schlagwörter

  • aggregation, benign solvent, diketopyrrolopyrrole, fused thiophene, gel permeation chromatography, grazing incidence X-ray diffraction, semiconducting polymer, thin film transistor