Role of Defects in the Breakdown Phenomenon of Al1-xScxN: From Ferroelectric to Filamentary Resistive Switching

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung


  • Roberto Guido - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Thomas Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Patrick D. Lomenzo - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)


Aluminum scandium nitride (Al1-xScxN), with its large remanent polarization, is an attractive material for high-density ferroelectric random-access memories. However, the cycling endurance of Al1-xScxN ferroelectric capacitors is far below what can be achieved in other ferroelectric materials. Understanding the nature and dynamics of the breakdown mechanism is of the utmost importance for improving memory reliability. The breakdown phenomenon in ferroelectric Al1-xScxN is proposed to be an impulse thermal filamentary-driven process along preferential defective pathways. For the first time, stable and robust bipolar filamentary resistive switching in ferroelectric Al1-xScxN is reported. A hot atom damage defect generation model illustrates how filament formation and ferroelectric switching are connected. The model reveals the tendency of the ferroelectric wurtzite-type Al1-xScxN system to reach internal symmetry with bipolar electric field cycling. Defects generated from bipolar electric field cycling influence both the energy barrier between the polarization states and that required for the filament formation.


Seiten (von - bis)7213-7220
FachzeitschriftNano letters
PublikationsstatusVeröffentlicht - 9 Aug. 2023

Externe IDs

PubMed 37523481
WOS 001038325700001
ORCID /0000-0003-3814-0378/work/145699201


Fächergruppen, Lehr- und Forschungsbereiche, Fachgebiete nach Destatis


  • aluminum scandium nitride, breakdown, defects, ferroelectrics, resistive switching., wurtzite, Aluminum scandium nitride, Resistiveswitching, Wurtzite, Breakdown, Ferroelectrics, Defects