This paper focuses on the review of leading-edge integrated radio frequency (RF) receiver chips for the wireless communication systems of the future. A 190 GHz silicongermanium bipolar complementary metal oxide semiconductor (SiGe BiCMOS) transceiver chipwith 47 dB gain and power consumption of only 122 mW is presented. Moreover, a 2.4 GHz SiGe BiCMOS receiver with aggressive duty cycling is discussed which can be operated with a power consumption down to 3 μW. Last but not least, a 20 MHz receiver with 15 dB gain is outlined which is fullyintegrated in a bendable plastic substrate and does not need any rigid components.