After the commercial introduction of 3.3 kV MOSFETs on the base of silicon carbide (SiC) the next generation of high power SiC devices to be commercially available are 2.3kV MOSFETs. This voltage class is intended to facilitate the design of two-level voltage-source-converters (2-Lvl VSC) for the application in active front ends with DC-voltages of 1.5 kV and below. This is the standard operation range of large power solar inverters, battery converters and rectifiers for electrolysis, since the DC-voltage stays in the framework defined by the low voltage standards. However, power converter manufacturers are pushing towards higher voltages for the aforementioned applications since higher voltages enable the reduction of the overall investment costs and losses of the electrical system. This publication aims at evaluating the performance of two active front end converters with 2.3 kV half bridge SiC-MOSFET modules. The first converter is a standard 2-Lvl VSC with parallel switches and a DC-Voltage of 1.35 kV. It represents the target application of the 2.3 kV SiC-MOSFET half bridge modules. The second is a three-level active-neutral-point-clamped voltage-source-converter (3L-ANPC-VSC) with a DC-voltage of 2.7 kV, offering a significant increase in DC-voltage. The performance of both converters is compared in terms of total apparent power and power per switch.