Pattern formation dynamics in a Memristor Cellular Nonlinear Network structure with a numerically stable VO2 memristor model

Publikation: Beitrag in FachzeitschriftÜbersichtsartikel (Review)BeigetragenBegutachtung

Abstract

In this work, we explore pattern formation dynamics across a diffusively coupled Memristor Cellular Nonlinear Network (MCNN), which is composed of identical cells with locally active memristors. We bias the cells on the edge-of-chaos, introduce a systematic design procedure to induce complexity in the array, and extract the element values analytically in a parametric form. In order to enhance the stability and speed of the numerical simulations, we apply a simple variable transformation to a core memristor model while we include the additional effect of parasitic resistors to investigate the locally active dynamics of a VO2 device. We first take a close look at the effect of the linear coupling resistor on pattern formation, and later study how nonlinearly-resistive coupling, based upon tangent hyperbolic law, affect the emergence of complex patterns. Simulation results reveal that a variety of static patterns with different characteristics can emerge across the proposed MCNN.

Details

OriginalspracheEnglisch
AufsatznummerSM0807
FachzeitschriftJapanese journal of applied physics
Jahrgang61
AusgabenummerSM
PublikationsstatusVeröffentlicht - 1 Okt. 2022
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0001-7436-0103/work/172566326
ORCID /0000-0002-1236-1300/work/172567151

Schlagworte

Schlagwörter

  • local activity, memristor cellular nonlinear network, memristor modeling, NDR memristor, pattern formation, ternary pattern