Organic field-effect transistor and circuit

Publikation: Geistiges EigentumPatentanmeldung/Patent

Beitragende

  • Novaled GmbH

Abstract

The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.

Details

The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.

OriginalspracheEnglisch
IPC (Internationale Patentklassifikation)H01L 51/ 10 A I
VeröffentlichungsnummerUS2010065833
Land/GebietDeutschland
Prioritätsdatum4 Aug. 2008
PrioritätsnummerDE20081036062
PublikationsstatusVeröffentlicht - 18 März 2010
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