The feasibility of the QD-Flash concept, its fast write and erase times, is demonstrated together with storage times of 4 days at room temperature. The storage time of holes in (InGa)Sb QDs embedded in a (AlGa)P matrix can be extended by growth modifications to 10 y. Tunneling structures were recently demonstrated to solve the trade-off conflict between storage time and erase time. A QD-NVSRAM is suggested to become the first commercial application.