Normally-Off Operation of Lateral Field-Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
The presence of a 2D electron gas (2DEG) in GaN/AlxGa1–xN heterostructures with low aluminum mole fraction is found to depend on the residual background impurity concentration in the GaN/AlGaN layer stack. At a residual donor level of 2 × 1016 cm−3, a 2DEG is absent at 300 K in dark environment. Such a 2DEG can be generated at the GaN/AlGaN interface either by illumination with ultraviolet light or by applying an electrostatic potential. The latter results in inherently normally-off switching characteristics of lateral field-effect transistors.
Details
Originalsprache | Englisch |
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Aufsatznummer | 1900732 |
Fachzeitschrift | Physica Status Solidi (A) Applications and Materials Science |
Jahrgang | 217 |
Ausgabenummer | 7 |
Publikationsstatus | Veröffentlicht - 1 Apr. 2020 |
Peer-Review-Status | Ja |
Externe IDs
ORCID | /0000-0003-3814-0378/work/142256216 |
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Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- 2D electron gas, molecular beam epitaxy growth, normally-off field-effect transistor, ultra-pure GaN/AlGaN heterostructrues