Metalorganic chemical vapor deposition (MOCVD) of nanostructured Er ₂O₃ thin films was performed using the Er-tris-guanidinate precursor [Er(DPDMG)₃] (DPDMG = diisopropyl-2- dimethylamidoguanidinato) as the Er source and oxygen. Film deposition was carried out on Si(100) and quartz glass substrates and the process parameters namely temperature, pressure and oxygen flow rate were varied. The resulting thin films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) for investigating the crystallinity and morphology, respectively. The chemical composition of the film was investigated by X-ray photoelectron spectroscopy (XPS) measurements. Transmittance and absorption spectra of the 600 °C film grown on glass substrates were performed by UV-vis measurements revealing more than 80% transmittance. The potential of Er₂O₃ thin films as gate dielectrics was verified by carrying out capacitance-voltage (C-V ) and current-voltage (I-V ) measurements. Dielectric constants estimated from the accumulation capacitance were found to be in the range of 10-12 in AC frequencies of 1 MHz down to 10 kHz and the leakage current of the order of 2×10^-8 A/cm² at the applied field of 1 MV cm^-1 was measured for films deposited under optimised process conditions. The low leakage current and high dielectric constant implies good quality of the Er₂O₃ layers relevant for high-k applications. These layers were found to be paramagnetic with a slightly reduced magnetic moment of the Er³⁺ ions.