The well-developed high-k technologies ease the integration complexity for HfO₂-based ferroelectric (FE) devices in the complementary metal-oxide semiconductor processes. Sputtered Hf_xZr_(1-x)O₂ (HZO) FEs have proven their thermal compatibility in back-end-of-line (BEOL) integration processes with high remanent polarization (P_r) and a high cycling endurance. With the help of a tungsten oxide (WO_x) bottom electrode, the sputtered HZO's FE properties are further advanced in this work. WO_x is used to tune the oxygen content in the HZO film, providing an FE performance with a maximum 2P_r of 46 µC cm⁻² and an endurance of 10⁸ cycles. Based on this, sputtered HZO can compete with the atomic layer deposited HZO in the BEOL processes. In addition, WO_x bottom electrodes enhance the FE capacitor behavior in a broad processing window, which relaxes the manufacturing restrictions.