Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia-Zirconia by Engineering of Tungsten Oxide Bottom Electrodes

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Xuetao Wang - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Thomas Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Matthias Grube - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)

Abstract

The well-developed high-k technologies ease the integration complexity for HfO2-based ferroelectric (FE) devices in the complementary metal-oxide semiconductor processes. Sputtered HfxZr(1-x)O2 (HZO) FEs have proven their thermal compatibility in back-end-of-line (BEOL) integration processes with high remanent polarization (Pr) and a high cycling endurance. With the help of a tungsten oxide (WOx) bottom electrode, the sputtered HZO's FE properties are further advanced in this work. WOx is used to tune the oxygen content in the HZO film, providing an FE performance with a maximum 2Pr of 46 µC cm2 and an endurance of 108 cycles. Based on this, sputtered HZO can compete with the atomic layer deposited HZO in the BEOL processes. In addition, WOx bottom electrodes enhance the FE capacitor behavior in a broad processing window, which relaxes the manufacturing restrictions.

Details

OriginalspracheEnglisch
Aufsatznummer2300798
FachzeitschriftAdvanced electronic materials
Jahrgang10
Ausgabenummer6
PublikationsstatusVeröffentlicht - Juni 2024
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0003-3814-0378/work/163295399

Schlagworte

Schlagwörter

  • back end of line, ferroelectrics, hafnium zirconium oxide, oxygen vacancy, sputtering, tungsten oxide