Thin films of Y₂O₃ are deposited on Si(100) and Al₂O₃ (0001) substrates via metal-organic (MO)CVD for the first time using two closely related yttrium tris-amidinate compounds as precursors in the presence of oxygen in the temperature range 400-700 °C. The structural, morphological, and compositional features of the films are investigated in detail. At deposition temperatures of 500 °C and higher both the precursors yield polycrystalline Y₂O₃ thin films in the cubic phase. The compositional analysis revealed the formation of nearly stoichiometric Y₂O₃. The optical band gaps are estimated using UV-Vis spectroscopy. Preliminary electrical measurements are performed in the form of a metal oxide semiconductor (MOS) structure of Al/Y₂O₃/p-Si/Ag. Leakage currents and dielectric constants are also determined. Y₂O₃ thin films are grown by MOCVD at 400-700 °C using yttrium amidinate presursors in the presence of oxygen. The films, which are polycrystalline in case of deposition temperatures > 400 °C, are dense and exhibit good purity and homogeneity.