Low Power 30 MHz D Flip-Flop in a Flexible a-IGZO Thin-Film Transistor Technology

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Abstract

A flexible D Flip-Flop (DFF) fabricated in an unipolar n-Type thin-film transistor (TFT) technology is studied and presented. It has two operating modes: low power mode, reaching frequencies up to 16 MHz with only 0.172 mW total power at 3 V supply voltage, and high speed mode, showing over 30 MHz operation at 9 V with 2.59 mW power. To reduce the energy consumption, this enhanced architecture decouples a significant portion of the circuit during part of the operating cycle. To the best of our knowledge, considering comparable thin-film technologies, this DFF provides the highest figure-of-merit (operation frequency/total power), and at high speed mode also the highest operation frequency reported up to date.

Details

OriginalspracheEnglisch
TitelIFETC 2023 - 5th IEEE International Flexible Electronics Technology Conference, Proceedings
Seiten1-3
ISBN (elektronisch)9798350332094
PublikationsstatusVeröffentlicht - 13 Aug. 2023
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0002-4230-8228/work/143783472
Scopus 85174389192
Mendeley 00982eb0-2bfb-3ddb-ad1f-5d114993354a

Schlagworte

Ziele für nachhaltige Entwicklung

Schlagwörter

  • Flipflop, Indium-gallium-zinc-oxide (IGZO), digital circuit, flexible electronics