Low Power 30 MHz D Flip-Flop in a Flexible a-IGZO Thin-Film Transistor Technology
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
A flexible D Flip-Flop (DFF) fabricated in an unipolar n-Type thin-film transistor (TFT) technology is studied and presented. It has two operating modes: low power mode, reaching frequencies up to 16 MHz with only 0.172 mW total power at 3 V supply voltage, and high speed mode, showing over 30 MHz operation at 9 V with 2.59 mW power. To reduce the energy consumption, this enhanced architecture decouples a significant portion of the circuit during part of the operating cycle. To the best of our knowledge, considering comparable thin-film technologies, this DFF provides the highest figure-of-merit (operation frequency/total power), and at high speed mode also the highest operation frequency reported up to date.
Details
Originalsprache | Englisch |
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Titel | IFETC 2023 - 5th IEEE International Flexible Electronics Technology Conference, Proceedings |
Seiten | 1-3 |
ISBN (elektronisch) | 9798350332094 |
Publikationsstatus | Veröffentlicht - 13 Aug. 2023 |
Peer-Review-Status | Ja |
Externe IDs
ORCID | /0000-0002-4230-8228/work/143783472 |
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Scopus | 85174389192 |
Mendeley | 00982eb0-2bfb-3ddb-ad1f-5d114993354a |
Schlagworte
Ziele für nachhaltige Entwicklung
ASJC Scopus Sachgebiete
Schlagwörter
- Flipflop, Indium-gallium-zinc-oxide (IGZO), digital circuit, flexible electronics