Local doping profiles for height-selective emitters determined by scanning spreading resistance microscopy (SSRM)

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Pablo Ferrada - , International Solar Energy Research Center (ISC) Konstanz (Autor:in)
  • Rudolf Harney - , International Solar Energy Research Center (ISC) Konstanz (Autor:in)
  • Eckard Wefringhaus - , International Solar Energy Research Center (ISC) Konstanz (Autor:in)
  • Stefan Doering - , Nanoelectronic Materials Laboratory (Autor:in)
  • Stefan Jakschick - , Nanoelectronic Materials Laboratory (Autor:in)
  • Thomas Mikolajick - , Nanoelectronic Materials Laboratory (Autor:in)
  • Pierre Eyben - , Interuniversitair Micro-Elektronica Centrum (Autor:in)
  • Thomas Hantschel - , Interuniversitair Micro-Elektronica Centrum (Autor:in)
  • Wilfried Vandervorst - , Interuniversitair Micro-Elektronica Centrum, KU Leuven (Autor:in)
  • Mathias Weiss - , Robert Bosch GmbH (Autor:in)
  • Jan Lossen - , Robert Bosch GmbH (Autor:in)

Abstract

In order to confirm the existence of a height-selective emitter, we compared local doping profiles of such emitters with profiles of a standard homogeneous emitter. The concept of a height-selective emitter is based on the classical selective emitter but in a smaller scale. The pyramid tips are highly doped. The sides and valleys are lowly doped. The comparison of the doping profiles was addressed by using a high-spatial-resolution analysis method: scanning spreading resistance microscopy. The measurement was performed on fully produced cells with a height-selective emitter and a standard homogeneous emitter, both with random pyramid textured surfaces. We prepared samples from these cells and investigated the cross sections. A representative pyramid of each type of emitter was selected. We found that for height-selective emitters the surface concentration can strongly vary depending on the measured position of the selected pyramid. The tip of the pyramid is heavily doped, while the bottom is lowly doped. For standard cells with a homogeneous emitter, the doping profiles do not differ dramatically as for the sample with a height-selective emitter. We calculated the local sheet resistance by using the measured local emitter profiles and a doping-dependent mobility model for phosphorus-doped silicon.

Details

OriginalspracheEnglisch
Seiten (von - bis)168-174
Seitenumfang7
FachzeitschriftIEEE Journal of Photovoltaics
Jahrgang3
Ausgabenummer1
PublikationsstatusVeröffentlicht - 2013
Peer-Review-StatusJa
Extern publiziertJa

Externe IDs

ORCID /0000-0003-3814-0378/work/142256321