Key technology for (V)HTR: Laser beam joining of SiC

Publikation: Beitrag in FachzeitschriftÜbersichtsartikel (Review)BeigetragenBegutachtung

Beitragende

Abstract

Laser beam joining has numerous advantages over other methods presently known. After having been developed successful for brazing silicon carbide for high temperature applications, this technology is now also available for silicon nitride. Thus the field of application of SiC and Si 3N 4 which are very interesting materials for the nuclear sector is considerably extended thanks to this new technology. Ceramic encapsulation of fuel and absorber increases the margins for operation at very high temperatures. Additionally, without ceramic encapsulation of the main core components, it will be difficult to continue claiming non-catastrophic behaviour for the (V)HTR.

Details

OriginalspracheEnglisch
Seiten (von - bis)464-465+433
FachzeitschriftATW - Internationale Zeitschrift fur Kernenergie
Jahrgang50
Ausgabenummer7
PublikationsstatusVeröffentlicht - Juli 2005
Peer-Review-StatusJa

Externe IDs

ORCID /0009-0001-5269-5882/work/148607569

Schlagworte