Incident photon-to-current efficiency measurements as a helpful tool to analyze luminescence loss mechanisms in organic light-emitting diodes

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • R. Huber - , Carl von Ossietzky Universität Oldenburg (Autor:in)
  • H. Borchert - , Carl von Ossietzky Universität Oldenburg (Autor:in)
  • E. Von Hauff - , Albert-Ludwigs-Universität Freiburg (Autor:in)
  • S. Heun - , Merck KGaA (Autor:in)
  • H. Buchholz - , Merck KGaA (Autor:in)
  • J. Parisi - , Carl von Ossietzky Universität Oldenburg (Autor:in)

Abstract

Electrical aging can increase non-radiative recombination processes in organic light-emitting diodes (OLEDs) which leads to a reduction in device efficiency. We investigated aging-related changes of the opto-electronic properties of OLEDs by a combination of photoluminescence, electroluminescence (EL), and photoluminescence excitation spectroscopy as well as measurements of the incident photon-to-current efficiency (IPCE). The EL measurements revealed a pronounced decrease in radiative recombination after electrical aging, and it is demonstrated here that IPCE measurements can make a useful contribution to identify the materials and processes that are affected most by electrical aging.

Details

OriginalspracheEnglisch
Aufsatznummer043311
FachzeitschriftApplied physics letters
Jahrgang103
Ausgabenummer4
PublikationsstatusVeröffentlicht - 22 Juli 2013
Peer-Review-StatusJa
Extern publiziertJa

Externe IDs

ORCID /0000-0002-6269-0540/work/172082578

Schlagworte

ASJC Scopus Sachgebiete