Doped metal oxide nanocrystals are emerging as versatile multi-functional materials with the potential to address several limitations of the current light-driven energy storage technology thanks to their unique ability to accumulate a large number of free electrons upon UV light exposure. The combination of these nanocrystals with a properly designed hole collector could lead to steady-state electron and hole accumulation, thus disclosing the possibility for light-driven energy storage in a single set of nanomaterials. In this framework, it is important to understand the role of the hole collector during UV light exposure. Here we show, via optical absorbance measurements under UV light, that well-defined graphene quantum dots with electron-donating character can act as hole acceptors and improve the stability of the photo-generated electrons in Sn-doped In₂O₃ nanocrystals. The results of this study offer new insight into the implementation of photo-charged storage devices based on hybrid organic/inorganic nanostructures.